Design of Ultra Wideband oscillator in 0.18 μm standard CMOS technology

Author

Neifar, Amel ; Bouzid, Ghazi ; Trabelsi, H. ; Masmoudi, Malek

Author_Institution

Micro Electro Thermal Syst. (METS) Res. Group, Nat. Eng. Sch. of Sfax, Sfax, Tunisia

fYear

2014

fDate

17-19 March 2014

Firstpage

529

Lastpage

532

Abstract

This paper describes the design of a 3-5 GHz oscillator for Impulse-Radio Ultra-Wideband (IR-UWB) transceiver in the 0.18 μm CMOS technology. The most important specifications for the voltage control oscillator (VCO) are provided and architecture for an existing frequency plan is introduced along with a discussion on its performance and implementation. The simulated VCO can achieve very wide tuning range along with low phase noise performance that varies from -92.02 dBc/Hz to -73 dBc/Hz at 1 MHz frequency offset from the carrier and the overall power consumption is 18.1 mW from a 1.8V voltage supply.

Keywords

CMOS integrated circuits; circuit tuning; field effect MMIC; microwave oscillators; phase noise; radio transceivers; ultra wideband communication; voltage-controlled oscillators; CMOS technology; IR-UWB; VCO; frequency 3 GHz to 5 GHz; impulse radio ultra wideband transceiver; microwave oscillator; phase noise performance; power 18.1 mW; size 0.18 mum; ultra wideband oscillator; voltage 1.8 V; voltage controlled oscillator; CMOS integrated circuits; Phase noise; Transistors; Tuning; Ultra wideband technology; Voltage-controlled oscillators; Hartley architecture; TAI-based VCO; UWB;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Technologies for Signal and Image Processing (ATSIP), 2014 1st International Conference on

Conference_Location

Sousse

Type

conf

DOI

10.1109/ATSIP.2014.6834671

Filename

6834671