• DocumentCode
    1564980
  • Title

    Extension of antenna rules for reducing P2ID in 0.13 Cu dual damascene technology

  • Author

    Ding, Qian-Wei ; Lee, Kay-Ming ; Lin, Chi-Liang ; Hsu, Michael C C

  • Author_Institution
    United Microelectron. Corp., Singapore
  • fYear
    2008
  • Firstpage
    393
  • Lastpage
    396
  • Abstract
    This paper reports the new findings between plasma-charging damage and device surroundings. Antenna design rule has been widely used in semiconductor industry to decrease the plasma charging damage. It is found that even when circuit layout satisfies the antenna design rules, plasma-charging damage may still occur. Macro and micro pattern density are found to have an impact on plasma process induced damage (P2ID) on the device. Macro pattern density is related to the mask transmission ratio, while micro pattern density is related to the conductive structures surrounding the device.
  • Keywords
    antennas; integrated circuit manufacture; sputter etching; antenna rules; damascene technology; integrated circuit fabrication; mask transmission ratio; pattern density; plasma etching; plasma process induced damage; plasma-charging; semiconductor industry; Aluminum; Conductors; Electronics industry; Etching; Plasma applications; Plasma density; Plasma devices; Plasma temperature; Testing; Transmitting antennas;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
  • Conference_Location
    Cambridge, MA
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4244-1964-7
  • Electronic_ISBN
    1078-8743
  • Type

    conf

  • DOI
    10.1109/ASMC.2008.4529078
  • Filename
    4529078