Title :
Extension of antenna rules for reducing P2ID in 0.13 Cu dual damascene technology
Author :
Ding, Qian-Wei ; Lee, Kay-Ming ; Lin, Chi-Liang ; Hsu, Michael C C
Author_Institution :
United Microelectron. Corp., Singapore
Abstract :
This paper reports the new findings between plasma-charging damage and device surroundings. Antenna design rule has been widely used in semiconductor industry to decrease the plasma charging damage. It is found that even when circuit layout satisfies the antenna design rules, plasma-charging damage may still occur. Macro and micro pattern density are found to have an impact on plasma process induced damage (P2ID) on the device. Macro pattern density is related to the mask transmission ratio, while micro pattern density is related to the conductive structures surrounding the device.
Keywords :
antennas; integrated circuit manufacture; sputter etching; antenna rules; damascene technology; integrated circuit fabrication; mask transmission ratio; pattern density; plasma etching; plasma process induced damage; plasma-charging; semiconductor industry; Aluminum; Conductors; Electronics industry; Etching; Plasma applications; Plasma density; Plasma devices; Plasma temperature; Testing; Transmitting antennas;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
978-1-4244-1964-7
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2008.4529078
