Title :
Advanced Dopant Metrology for 45 nm and Beyond
Author :
Salnik, Alex ; Shaughnessy, Derrick ; Nicolaides, Lena
Author_Institution :
KLA-Tencor Corp., San Jose, CA
Abstract :
An overview of the advanced (45 nm and beyond) ion implant and USJ metrology applications using the modulated optical reflectance (MOR) technology is provided.
Keywords :
ion implantation; semiconductor doping; USJ metrology applications; dopant metrology; ion implant; modulated optical reflectance technology; Annealing; Implants; Laser excitation; Metrology; Monitoring; Optical modulation; Plasma measurements; Plasma waves; Probes; Wavelength measurement;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
978-1-4244-1964-7
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2008.4529081
