Constructive methods of functioning assurance of memory microcircuits at radiation influence

Author

Bogatyrev, Yu.V. ; Grabchikov, S.S. ; Lastovsky, S.B. ; Turtsevich, A.S. ; Shwedov, S.V.

Author_Institution

Sci.-Practical Mater. Res. Centre, Minsk, Belarus

fYear

2014

fDate

7-13 Sept. 2014

Firstpage

849

Lastpage

851

Abstract

The results of experimental researches of protective properties of screens on the basis of coverings Bi/Sb and composite tungsten-copper (W75Cu25) at 1.8 MeV electron irradiation of microcircuits of programmable ROM 256 K are submitted. It is found that application of these coverings allows increasing hardness of ROM to 1.8 MeV electron radiation by factor of 13-16 to fluences Fe = (3 ÷ 6)·1014 cm-2. Calculation equivalent values of fluences Fρ = (2.25 ÷ 4.5)·1013 cm-2 of 23.3 MeV proton radiation, wherein be assured of ROM functioning with specified screen arrangement are defined.

Keywords

hardness; integrated circuits; composite tungsten-copper; electron irradiation; electron radiation; electron volt energy 1.8 MeV; electron volt energy 23.3 MeV; functioning assurance; hardness; memory microcircuits; programmable ROM; proton radiation; radiation influence; screen protective properties; Microelectronics; Read only memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-412-5

Type

conf

DOI

10.1109/CRMICO.2014.6959661

Filename

6959661