Title :
Laser simulation of ionization effects in microwave elements on A3B5 semiconductor compounds
Author :
Gromov, D.V. ; Skorobogatov, Petr K. ; Polevich, S.A.
Author_Institution :
Nat. Res. Nucl. Univ. MEPhI (Moscow Eng. Phys. Inst.), Moscow, Russia
Abstract :
The possibility of transient radiation effects simulation is shown using laser radiation in the microwave elements based on A3B5 semiconductor compounds. The results of the laser ionization effects simulation in pseudomorphic HEMT at Al-GaAs/InGaAs/GaAs semiconductor heterostructure are presented.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; ionisation; laser beam effects; microwave field effect transistors; A3B5 semiconductor compounds; AlGaAs-InGaAs-GaAs; ionization effects; laser ionization effect simulation; microwave elements; pseudomorphic HEMT; semiconductor heterostructure; transient radiation effect simulation; Gallium arsenide; Gallium nitride; Indium phosphide; Lasers; Logic gates; Silicon; Transient analysis;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959662
