DocumentCode
156510
Title
Laser simulation of ionization effects in microwave elements on A3B5 semiconductor compounds
Author
Gromov, D.V. ; Skorobogatov, Petr K. ; Polevich, S.A.
Author_Institution
Nat. Res. Nucl. Univ. MEPhI (Moscow Eng. Phys. Inst.), Moscow, Russia
fYear
2014
fDate
7-13 Sept. 2014
Firstpage
852
Lastpage
855
Abstract
The possibility of transient radiation effects simulation is shown using laser radiation in the microwave elements based on A3B5 semiconductor compounds. The results of the laser ionization effects simulation in pseudomorphic HEMT at Al-GaAs/InGaAs/GaAs semiconductor heterostructure are presented.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; ionisation; laser beam effects; microwave field effect transistors; A3B5 semiconductor compounds; AlGaAs-InGaAs-GaAs; ionization effects; laser ionization effect simulation; microwave elements; pseudomorphic HEMT; semiconductor heterostructure; transient radiation effect simulation; Gallium arsenide; Gallium nitride; Indium phosphide; Lasers; Logic gates; Silicon; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-412-5
Type
conf
DOI
10.1109/CRMICO.2014.6959662
Filename
6959662
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