Title :
Total ionizing dose hardness of microwave electronics
Author :
Kalashnikov, O.A. ; Elesin, Vadim V. ; Gromov, D.V.
Author_Institution :
Nat. Res. Nucl., Univ. MEPhI, Moscow, Russia
Abstract :
A review of microwave electronics total ionizing dose (TID) test results is presented. It is shown that microwave electronics is usually characterized by high TID hardness as compared to electronic components of other functional types. However, there are microwave components with relatively low hardness, these parts contain CMOS elements.
Keywords :
CMOS integrated circuits; microwave integrated circuits; radiation hardening (electronics); CMOS elements; electronic components; high TID hardness; microwave components; microwave electronics; total ionizing dose hardness; CMOS integrated circuits; Silicon germanium;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959666
