Magneto-optical study of Mn ions implanted in Ge

Author

D´Orazio, F. ; Lucari, F. ; Passacantando, M. ; Santucci, P.P.S. ; Verna, A.

Author_Institution

Dipt. di Fisica, INFM-Universita dell´Aquila, L´Aquila, Italy

fYear

2002

Abstract

Summary form only given. The synthesis of optimal materials for spin dependent electronics is the challenging goal of recent studies. Magnetic multilayers are the most popular solution, but a promising alternative is constituted by magnetic semiconductors. One of these is Mn:Ge which shows ferromagnetic properties and magnetoresistance phenomena below room temperature, attributed to Mn/sub x/Ge/sub 1-x/ clusters. In the present work, we investigate the properties of samples obtained by implanting Mn/sup +/ ions on Ge(100) at energy of 100 keV, with a dose of 2 x 10/sup 16/ at./cm/sup 2/. The temperature of the substrate was 300/spl deg/C. We report the results obtained in the as-prepared material, in the material annealed for 1 hour at 400/spl deg/C, and 600/spl deg/C.

Keywords

Kerr magneto-optical effect; X-ray photoelectron spectra; X-ray reflection; elemental semiconductors; germanium; ion implantation; magnetic semiconductors; magneto-optical effects; manganese; 1 h; 100 keV; 300 C; 400 C; 600 C; Ge:Mn; Mn/sub x/Ge/sub 1-x/; X-ray photoemission spectroscopy; X-ray reflectivity; ferromagnetic properties; magnetic semiconductors; magneto-optical Kerr effect; magnetoresistance phenomena; Annealing; Electron optics; Magnetic field measurement; Magnetic properties; Microwave FETs; Microwave devices; Microwave transistors; Optical pumping; Saturation magnetization; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Conference_Location

Amsterdam, The Netherlands

Print_ISBN

0-7803-7365-0

Type

conf

DOI

10.1109/INTMAG.2002.1000785

Filename

1000785