Title :
Magneto-optical study of Mn ions implanted in Ge
Author :
D´Orazio, F. ; Lucari, F. ; Passacantando, M. ; Santucci, P.P.S. ; Verna, A.
Author_Institution :
Dipt. di Fisica, INFM-Universita dell´Aquila, L´Aquila, Italy
Abstract :
Summary form only given. The synthesis of optimal materials for spin dependent electronics is the challenging goal of recent studies. Magnetic multilayers are the most popular solution, but a promising alternative is constituted by magnetic semiconductors. One of these is Mn:Ge which shows ferromagnetic properties and magnetoresistance phenomena below room temperature, attributed to Mn/sub x/Ge/sub 1-x/ clusters. In the present work, we investigate the properties of samples obtained by implanting Mn/sup +/ ions on Ge(100) at energy of 100 keV, with a dose of 2 x 10/sup 16/ at./cm/sup 2/. The temperature of the substrate was 300/spl deg/C. We report the results obtained in the as-prepared material, in the material annealed for 1 hour at 400/spl deg/C, and 600/spl deg/C.
Keywords :
Kerr magneto-optical effect; X-ray photoelectron spectra; X-ray reflection; elemental semiconductors; germanium; ion implantation; magnetic semiconductors; magneto-optical effects; manganese; 1 h; 100 keV; 300 C; 400 C; 600 C; Ge:Mn; Mn/sub x/Ge/sub 1-x/; X-ray photoemission spectroscopy; X-ray reflectivity; ferromagnetic properties; magnetic semiconductors; magneto-optical Kerr effect; magnetoresistance phenomena; Annealing; Electron optics; Magnetic field measurement; Magnetic properties; Microwave FETs; Microwave devices; Microwave transistors; Optical pumping; Saturation magnetization; Temperature;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1000785
