Title :
Change in radiating power of the algainp heterostructures under irradiation by fast neutrons
Author :
Orlova, K.N. ; Gradoboev, A.V.
Author_Institution :
Yurga Technol. Inst., Tomsk Polytech. Univ., Kemerovo, Russia
Abstract :
It is established, that radiating power is reduced in three stages under irradiation by fast neutrons. There are areas of high, average and low electron injection in the active area of the light-emitting diodes. The final stage of the reducing process of light output power is a low electron injection.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; neutron effects; semiconductor heterojunctions; AlGaInP; AlGaInP heterostructures; active area; average electron injection area; fast neutrons; high electron injection area; light output power; light-emitting diodes; low electron injection area; radiating power; Atomic measurements; RNA;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959672
