DocumentCode
156522
Title
Dynamics of development of thermal processes in semiconductor structures at the local effects of microwave radiation
Author
Taran, E.P. ; Gordienko, Yu.E. ; Slipchenko, N.I.
Author_Institution
Taurida Nat. V. I. Vernadsky Univ., Simferopol, Ukraine
fYear
2014
fDate
7-13 Sept. 2014
Firstpage
878
Lastpage
879
Abstract
The present paper concerns the basic principles of the model of local effects of microwave radiation in semiconductor structures. The validity of the proposed model is based on the method of finite-difference time-domain (FDTD) is shown. The influence of radius of a spherical probe on the distribution and values of the field intensity in the axis of semiconductor structures is determined. Dynamics of development of thermal processes in the local region of semiconductor structures in a continuous mode with relation to electrophysical parameters on temperature are obtained.
Keywords
finite difference time-domain analysis; radiation effects; semiconductors; continuous mode; electrophysical parameters; field intensity distribution; finite-difference time-domain method; local microwave radiation effects; local region; semiconductor structure axis; spherical probe radius; thermal process development dynamics; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-412-5
Type
conf
DOI
10.1109/CRMICO.2014.6959674
Filename
6959674
Link To Document