Title :
The radiation-hardened source of reference voltage of negative polarity for silicon bipolar-JFET technology
Author :
Starchenko, Evgeniy I. ; Prokopenko, Nikolay N.
Author_Institution :
Dept. “Inf. Syst. & Radioeng.”, Don State Tech. Univ., Rostov-on-Don, Russia
Abstract :
The present paper concerns the circuit methods for the construction of the temperature-stable voltage references with the use of base of npn-type and bipolar JFET transistors. The new circuitry of the voltage references is suggested for bi-FET technology which renders possible to create microelectronic products with the radiation hardness up to 1 Mrad and F=1013-1014 n/cm2 acceptable for many applications.
Keywords :
JFET circuits; bipolar transistor circuits; elemental semiconductors; radiation hardening (electronics); reference circuits; silicon; Si; bi-FET technology; circuit methods; microelectronic products; negative polarity; npn-type JFET transistors; radiation-hardened source; silicon bipolar-JFET technology; temperature-stable voltage references; Regulators;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959675
