Title :
Failure mechanisms of Trench IGBT under various short-circuit conditions
Author :
Benmansour, A. ; Azzopardi, S. ; Martin, J.C. ; Woirgard, E.
Author_Institution :
IMS - ENSEIRB, Talence
Abstract :
Four short circuit electrical configurations leading to the Trench IGBT failures are studied in detail by the help a two dimensional physically-based device simulator. By analyzing different internal physical parameters, it was highlighted that the failure occurring during the turn-on is due to a high impact ionization generation rate, whereas the failures occurring during on- state, at the turn-off and the one occurring some microseconds after turn-off are due to a thermal runaway phenomenon.
Keywords :
failure analysis; insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; short-circuit currents; Trench IGBT; failure analysis; high impact ionization generation rate; power semiconductor device; short circuit electrical configurations; thermal runaway phenomenon; two dimensional physically-based device simulator; Breakdown voltage; Circuit simulation; Circuit testing; Computational modeling; Electric resistance; Electrical resistance measurement; Failure analysis; Impact ionization; Insulated gate bipolar transistors; Temperature;
Conference_Titel :
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-0654-8
Electronic_ISBN :
0275-9306
DOI :
10.1109/PESC.2007.4342297
