Failure mechanisms of Trench IGBT under various short-circuit conditions

Author

Benmansour, A. ; Azzopardi, S. ; Martin, J.C. ; Woirgard, E.

Author_Institution

IMS - ENSEIRB, Talence

fYear

2007

Firstpage

1923

Lastpage

1929

Abstract

Four short circuit electrical configurations leading to the Trench IGBT failures are studied in detail by the help a two dimensional physically-based device simulator. By analyzing different internal physical parameters, it was highlighted that the failure occurring during the turn-on is due to a high impact ionization generation rate, whereas the failures occurring during on- state, at the turn-off and the one occurring some microseconds after turn-off are due to a thermal runaway phenomenon.

Keywords

failure analysis; insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; short-circuit currents; Trench IGBT; failure analysis; high impact ionization generation rate; power semiconductor device; short circuit electrical configurations; thermal runaway phenomenon; two dimensional physically-based device simulator; Breakdown voltage; Circuit simulation; Circuit testing; Computational modeling; Electric resistance; Electrical resistance measurement; Failure analysis; Impact ionization; Insulated gate bipolar transistors; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2007. PESC 2007. IEEE

Conference_Location

Orlando, FL

ISSN

0275-9306

Print_ISBN

978-1-4244-0654-8

Electronic_ISBN

0275-9306

Type

conf

DOI

10.1109/PESC.2007.4342297

Filename

4342297