• DocumentCode
    1565502
  • Title

    Physics-based Model for Emitter Turn-Off Thyristor (ETO)

  • Author

    Huang, Alex Q. ; Zhou, Xigen ; Chen, Bin

  • Author_Institution
    North Carolina State Univ., Raleigh
  • fYear
    2007
  • Firstpage
    1930
  • Lastpage
    1934
  • Abstract
    A physics-based lumped charge model is developed for the novel emitter turn-off (ETO) thyristor. The model facilitates the development of this advanced power semiconductor device. With the aid of the model, the ETO operation mechanism is better understood. Experimental results confirm the validation of the model, and the model is further used in the study of device series operation and parallel operation.
  • Keywords
    thyristors; ETO; emitter turn-off thyristor; power semiconductor device; Insulated gate bipolar transistors; MOSFET circuits; Physical layer; Physics; Poisson equations; Power electronics; Power semiconductor devices; Semiconductor diodes; Thyristors; Voltage; ETO; lumped charge model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    0275-9306
  • Print_ISBN
    978-1-4244-0654-8
  • Electronic_ISBN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.2007.4342298
  • Filename
    4342298