• DocumentCode
    156552
  • Title

    An automatic synthesis tool for nanometer low dropout regulator using simulation based model and geometric programming

  • Author

    Shih-Hsin Hsu ; Wei-Zen Chen ; Jui-Pin Zheng ; Liu, Sean S.-Y ; Po-Cheng Pan ; Hung-Ming Chen

  • Author_Institution
    Electron. Engr Dept., NCTU, Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    28-30 April 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents an efficient synthesis framework for Low Dropout Regulator (LDOs) automatic design to facilitate varieties of power management ICs applications. A four-stage synthesizer is proposed to deal with topology selection, transistor sizing, and layout generation automatically. The proposed approach correctly describes device behaviors in moderate and strong inversion regions for current optimization. Without trivial trial and error procedure, the “SPICE accuracy” device size mapping is provided, and the resulting layout is compact and regular while meeting analog design constraints. Using the proposed synthesis tool for LDO automatic design, a prototype chip has been successfully fabricated in 65nm CMOS process. The experimental results validate our methodology in industrial cases with high performance and meet all the target specifications.
  • Keywords
    CMOS integrated circuits; geometric programming; integrated circuit layout; integrated circuit modelling; nanoelectronics; power integrated circuits; voltage regulators; CMOS process; LDOs automatic design; SPICE accuracy device size mapping; analog design constraints; automatic synthesis tool; four-stage synthesizer; geometric programming; layout generation; nanometer low dropout regulator; power management IC; simulation based model; size 65 nm; topology selection; transistor sizing; Design automation; Integrated circuit modeling; Layout; Mathematical model; Regulators; Resistors; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test (VLSI-DAT), 2014 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-DAT.2014.6834871
  • Filename
    6834871