Title :
Dielectric behavior in the BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 ternary system
Author :
Lim, J. B. ; Zhang, S. J. ; Kim, N. C. ; Shrout, T. R.
Author_Institution :
Material Research Institute, Pennsylvania State University, University Park, 16802, USA
Abstract :
(1−x)[0.4BiScO3−0.6BaTiO3] + x (K1/2Bi1/2)TiO3 [BSBT-KBTx] ceramics in the perovskite solid solution system were studied for potential high temperature capacitor applications. The diectric properties of BSBT-KBTx ceramics were investigated as a function temperature and frequency. The BSBT-KBTx ceramics showed high dielectric permittivity (≫ 1000 @RT) and low dielectric loss over the temperature range from 100 ∼ 300°C with a flat temperature coefficient (TCC). In addition, BSBT-KBTx ceramics were observed to possess a dielectric relaxation at temperatures (≫ 300 K). Polarization measurements as a function of electric field showed high energy storage densities with 1.8 J/cm3 at 120 kV/cm. Therefore, dielectrics in this novel ternary system appear to be promising candidates for high temperature and energy storage capacitors.
Keywords :
Bismuth; Capacitors; Ceramics; Dielectric losses; Energy storage; Frequency; Permittivity; Polarization; Solids; Temperature distribution;
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2008.4688090
