DocumentCode
156566
Title
Efficient test length reduction techniques for interposer-based 2.5D ICs
Author
Shyue-Kung Lu ; Huai-Min Li ; Hashizume, Masaki ; Jin-Hua Hong ; Zheng-Ru Tsai
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
fYear
2014
fDate
28-30 April 2014
Firstpage
1
Lastpage
4
Abstract
Three-dimensional integration is considered a promising solution to cure the challenges of performance, power consumption, quality, and reliability issues. The feature of 2.5D ICs is that the dies are stacked on a passive silicon interposer and the dies communicate with each other by means of TSV-based interconnects and re-Distribution layers (RDL) within the silicon interposer. This paper aims to investigate the efficient post-bond test technique for the 2.5D ICs with silicon interposer. In order to efficiently reuse the functional interconnects as the parallel TAM (test access mechanism) for testing dies, a novel macro-die-based interconnect reuse strategy and its corresponding design-for-test (DFT) architecture are proposed in this paper. The proposed strategy merges several dies to form a macro die and then connected to other dies to form a daisy chain for testing. Experimental results show that the proposed techniques have higher success rates for the required TAM width constraints. Moreover, since we can get wider TAMs, the test length then can be reduced significantly.
Keywords
design for testability; integrated circuit bonding; integrated circuit interconnections; integrated circuit testing; vias; TSV based interconnect; TSV redistribution layer; design-for-test architecture; efficient test length reduction technique; functional interconnect reuse; interposer based 2.5D IC; parallel TAM; passive silicon interposer; post bond test technique; test access mechanism; Computer architecture; Delays; Discrete Fourier transforms; Educational institutions; Search problems; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation and Test (VLSI-DAT), 2014 International Symposium on
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/VLSI-DAT.2014.6834878
Filename
6834878
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