Title :
Resistivity reliability of tunneling magnetoresistive heads
Author :
Seongtae Bae ; I-Fei Tsu ; Davis, M. ; Nowak, J.J. ; Judy, J.H.
Author_Institution :
University of Minnesota
Abstract :
Summary form only given. The electrical reliability of tunneling magnetoresistive (TMR) read heads has been investigated in terms of breakdown voltage[ 11 and electrical open failures[2] under constant biasing-current. The breakdown voltage is strongly dependent on duration of the applied voltage step, and ambient temperature.
Keywords :
Conductivity; Frequency; Magnetic field measurement; Magnetic heads; Magnetic noise; Magnetic sensors; Noise figure; Noise measurement; Temperature sensors; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1000844
