Title :
Relationship between defects and the dielectric and transport properties of SrTiO3 thin films
Author :
Son, Junggab ; Cagnon, J. ; Finstrom, N. H. ; Boesch, D. S. ; Lu, J. W. ; Stemmer, Susanne
Author_Institution :
Materials Department, University of California, Santa Barbara, 93106-5050, USA
Abstract :
We report on some of the key properties of ferroelectric and high-permittivity thin films relevant for their application in metal/insulator/metal structures, such as voltage tunable capacitors and novel memories. We use a model system, Pt/SrTiO3/Pt thin film structures, with microstructures, stress states and point defects characterized by advanced transmission electron microscopy techniques, high-resolution x-ray diffraction and wafer curvature measurements. We investigate the relation between defects and dielectric properties, measured at frequencies up to 1 GHz. We discuss the origins of dielectric losses in these films and the role of point defects, such as oxygen vacancies. We report on dielectric deadlayers, which cause a significant reduction in the dielectric tunabilities. We discuss the influence of dielectric relaxation on the thermal leakage characteristics of textured and epitaxial Pt/SrTiO3/Pt thin film structures. We also discuss the properties of Pt/SrTiO3/Pt structures with ultrathin (5 – 10 nm) SrTiO3 films.
Keywords :
Capacitors; Dielectric losses; Dielectric measurements; Dielectric thin films; Dielectrics and electrical insulation; Ferroelectric materials; Metal-insulator structures; Microstructure; Semiconductor device modeling; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2008.4688117
