DocumentCode :
1565939
Title :
Comparative Study of Lateral and Trench Power MOSFETs in Multi-MHz Buck Converter Applications
Author :
Xiong, Yali ; Cheng, Xu ; Okada, David ; Shen, Z. John
Author_Institution :
Univ. of Central Florida, Orlando
fYear :
2007
Firstpage :
2175
Lastpage :
2181
Abstract :
This paper presents a comparative study of lateral and trench power MOSFETs in hard switching synchronous buck converters operating in the multi-MHz frequency range based on a mixed-mode device/circuit modeling approach. Detailed power loss analysis is performed for the control and synchronous MOSFETs. It is observed that the inherently low gate charge QG of lateral MOSFETs offers significant reduction in gate drive losses, which become increasingly important in the multi-MHz frequency range and especially light load conditions. Furthermore, the power loss due to the reverse recovery of the SyncFET body diode becomes a major limiting factor in the MHz frequency range for both trench and lateral MOSFETs. This factor will eventually determine the maximum practical switching frequency of the buck converter.
Keywords :
integrated circuit modelling; power MOSFET; power convertors; semiconductor device models; SyncFET body diode; mixed-mode device/circuit modeling; power MOSFET; power loss analysis; switching frequency; synchronous buck converters; Buck converters; Circuit simulation; Current measurement; DC-DC power converters; Frequency conversion; MOSFETs; Parasitic capacitance; Performance analysis; Power measurement; Switching frequency; Lateral trench power MOSFET; VRM; body diode; gate charge; reverse recovery; synchronous buck converter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location :
Orlando, FL
ISSN :
0275-9306
Print_ISBN :
978-1-4244-0654-8
Electronic_ISBN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.2007.4342345
Filename :
4342345
Link To Document :
بازگشت