Title :
Energy-efficient low-noise 16-channel analog-front-end circuit for bio-potential acquisition
Author :
Shang-Lin Wu ; Po-Tsang Huang ; Teng-Chieh Huang ; Kuan-Neng Chen ; Jin-Chern Chiou ; Kuo-Hua Chen ; Chi-Tsung Chiu ; Ho-Ming Tong ; Ching-Te Chuang ; Wei Hwang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, an energy-efficient and low-noise 16-channel analog front-end (AFE) circuitry is proposed for acquisition of electrophysiological signals. This fully integrated front-end circuit comprises two differential difference amplifiers (DDAs) and DC offset rejection components. Additionally, the DDA is designed using a double input Gm-stage and a class-AB output for achieving high common-mode rejection ratio (CMRR), low-noise and energy efficiency. The 16-channel AFE with analog-to-digital converters (ADCs) is implemented in TSMC 0.18μm CMOS process. The measurement results show that the AFE can realize 60.3dB gain with only 20.67μW for each channel. The bandwidth of the AFE is from 2.32Hz to 6.61kHz. Furthermore, the total input referred noise and noise efficiency factor (NEF) are 0.826μVrms and 2.78 only within the target frequency range of 0.1Hz to kHz, respectively.
Keywords :
CMOS analogue integrated circuits; DC amplifiers; analogue-digital conversion; bioelectric potentials; biomedical electronics; differential amplifiers; low noise amplifiers; medical signal processing; CMOS process; DC offset rejection components; analog-to-digital converters; biopotential acquisition; class-AB output; differential difference amplifiers; double input Gm-stage; electrophysiological signal acquisition; energy efficiency; energy-efficient low-noise 16-channel analog-front-end circuit; frequency 0.01 Hz to 6.61 kHz; fully integrated front-end circuit; high common-mode rejection ratio; low-noise efficiency; noise efficiency factor; power 20.67 muW; size 0.18 mum; total input referred noise; Capacitors; Energy efficiency; Immune system; Noise; Resistors; Sensors; Transistors;
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-DAT.2014.6834893