Title :
SiGe BiCMOS technology and circuits for active safety systems
Author :
Dielacher, Franz ; Tiebout, Marc ; Lachner, Rudolf ; Knapp, Herbert ; Aufinger, Klaus ; Sansen, Willy
Author_Institution :
Infineon Technol. Austria AG, Villach, Austria
Abstract :
This paper provides an overview of the features and capabilities of state-of-the-art SiGe devices and BiCMOS technology for applications such as high-data-rate communications and pro-active safety systems like car-radar, identification and e-safety. The capabilities offered by SiGe-BiCMOS and microwave packaging enable the integration of complete transceivers on a chip or in a package even including the antenna. The criteria and trade-off´s for the technology selection and system partitioning are described in the introduction. In addition to the electrical components performance, major criteria are addressed such as high reliability, long lifetime and high yield fabrication. Advanced packaging technologies are addressed as well, including embedded passive components and package co-design. Existing circuit design examples and future solutions for 77 GHz automotive radar are presented, followed by a multichannel receiver and a multichannel transmitter for mm-wave people scanners for airport security.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; electronics packaging; microwave circuits; safety systems; semiconductor materials; BiCMOS technology; SiGe; active safety systems; advanced packaging technology; airport security; antenna; automotive radar; car-radar; circuit design; e-safety; electrical component performance; frequency 77 GHz; high reliability; high yield fabrication; high-data-rate communications; long lifetime; microwave packaging; mm-wave people scanners; multichannel receiver; multichannel transmitter; package co-design; pro-active safety systems; system partitioning; technology selection; transceivers; Automotive engineering; BiCMOS integrated circuits; Heterojunction bipolar transistors; Radar; Receivers; Silicon germanium; Transmitters; Automotive Radar; BiCMOS; Heterojunction Bipolar Transistor (HBT); Silicon-Germanium (SiGe); mm-Wave Imaging; mm-Wave Security Scanner;
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-DAT.2014.6834937