High mobility of surface atoms and induced uniaxial anisotropy in very thin Permalloy films

Author

Katada, H. ; Shimatsu, T. ; Watanabe, H. ; Watanabe, I. ; Muraoka, H. ; Nakamura, Y. ; Sugita, Y.

Author_Institution

RIEC, Tohoku Univ., Sendai, Japan

fYear

2002

Abstract

Summary form only given. The value of H/sub k/ in very thin Permalloy or CoZrNb films, sandwiched by seed and protective Ta or Cu layers, decreases as the thickness decreases below 20 nm, indicating that the H/sub k/ reduction is independent on the material, the surface energy, or crystal structure of the seed and protective layers. In this study, the temperature dependence of K/sub u/ in very thin Permalloy films was measured to examine the surface effect on induced uniaxial anisotropy.

Keywords

Permalloy; ferromagnetic materials; induced anisotropy (magnetic); magnetic thin films; metallic thin films; surface energy; FeNi; Ta; film thickness; induced uniaxial anisotropy; surface atom mobility; surface effect; surface energy; temperature dependence; very thin Permalloy films; Anisotropic magnetoresistance; Atomic layer deposition; Magnetic anisotropy; Magnetic field measurement; Magnetic films; Magnetic hysteresis; Magnetization; Protection; Sputtering; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Conference_Location

Amsterdam, The Netherlands

Print_ISBN

0-7803-7365-0

Type

conf

DOI

10.1109/INTMAG.2002.1000966

Filename

1000966