Title :
High mobility of surface atoms and induced uniaxial anisotropy in very thin Permalloy films
Author :
Katada, H. ; Shimatsu, T. ; Watanabe, H. ; Watanabe, I. ; Muraoka, H. ; Nakamura, Y. ; Sugita, Y.
Author_Institution :
RIEC, Tohoku Univ., Sendai, Japan
Abstract :
Summary form only given. The value of H/sub k/ in very thin Permalloy or CoZrNb films, sandwiched by seed and protective Ta or Cu layers, decreases as the thickness decreases below 20 nm, indicating that the H/sub k/ reduction is independent on the material, the surface energy, or crystal structure of the seed and protective layers. In this study, the temperature dependence of K/sub u/ in very thin Permalloy films was measured to examine the surface effect on induced uniaxial anisotropy.
Keywords :
Permalloy; ferromagnetic materials; induced anisotropy (magnetic); magnetic thin films; metallic thin films; surface energy; FeNi; Ta; film thickness; induced uniaxial anisotropy; surface atom mobility; surface effect; surface energy; temperature dependence; very thin Permalloy films; Anisotropic magnetoresistance; Atomic layer deposition; Magnetic anisotropy; Magnetic field measurement; Magnetic films; Magnetic hysteresis; Magnetization; Protection; Sputtering; Temperature dependence;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1000966
