Temperature effect on the giant magnetoimpedance in amorphous materials

Author

Rheem, Y.W. ; Kim, C.G. ; Kim, C.O. ; Kim, G.W. ; Yoon, S.S.

Author_Institution

Res. Center for Adv. Magnetic Mater., Chungnam Nat. Univ., Taejon, South Korea

fYear

2002

Abstract

Summary form only given. We measure the GMI ratio in a weak-field-annealed amorphous sample as a function of the measuring temperature over room temperature and discuss the change of GMI ratio in terms of the change of domain wall motions and rotational magnetization. Amorphous samples of Co/sub 66/Fe/sub 4/B/sub 15/Si/sub 15/ were annealed at a temperature of 380/spl deg/C for 8 h in air. The annealing field, 3 Oe, was applied in the direction of the sample axis direction using a Helmholtz coil. The absolute value of impedance Z was measured by an impedance analyzer. The measuring temperature changed from 300 K to 443 K.

Keywords

amorphous magnetic materials; boron alloys; cobalt alloys; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic annealing; magnetic domain walls; magnetisation; metallic glasses; silicon alloys; 300 to 443 K; 380 degC; 8 h; Co/sub 66/Fe/sub 4/B/sub 15/Si/sub 15/; GMI ratio; amorphous materials; domain wall motion; giant magnetoimpedance; rotational magnetization; temperature effect; weak-field-annealing; Amorphous magnetic materials; Amorphous materials; Annealing; Impedance; Magnetic domain walls; Magnetic domains; Magnetic field measurement; Magnetization; Rotation measurement; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Conference_Location

Amsterdam, The Netherlands

Print_ISBN

0-7803-7365-0

Type

conf

DOI

10.1109/INTMAG.2002.1000972

Filename

1000972