DocumentCode :
1567348
Title :
Technology-caused performance limitation of the common-gate LNA
Author :
Stücke, Thomas ; Kokozinski, Rainer ; Kolnsberg, Stephan ; Hosticka, Bedrich J.
Author_Institution :
Infineon Technol. AG, Neubiberg
fYear :
2007
Firstpage :
60
Lastpage :
63
Abstract :
In this paper, the performance limitation of common-gate LNAs (CG-LNAs) caused by short channel effects is presented. The analysis is based on equations, which describes the behavior of the MOSFET including the noise sources in all possible regions of operation. From these equations, the input time constant Tin is defined as one characteristic performance figure of the used CMOS technology. The bias dependent limitation of the noise figure NF and minimum input reflection coefficient min (S11,dB) is derived in dependence of Tin. The paper shows furthermore the advantage of biasing the CG-LNA in the moderate inversion region.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit noise; low noise amplifiers; CMOS technology; MOSFET; bias dependent limitation; common-gate LNA; minimum input reflection coefficient min; noise figure; noise sources; short channel effects; technology-caused performance limitation; Acoustic reflection; CMOS technology; Equations; Frequency; Impedance; MOSFET circuits; Noise figure; Parasitic capacitance; Telephony; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuit Theory and Design, 2007. ECCTD 2007. 18th European Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4244-1341-6
Electronic_ISBN :
978-1-4244-1342-3
Type :
conf
DOI :
10.1109/ECCTD.2007.4529536
Filename :
4529536
Link To Document :
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