Title :
A 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technology
Author :
Brandano, Davide ; Delgado-Restituto, Manuel ; Ruiz-Amaya, Jesús ; Rodriguez-Vazquez, Angel
Author_Institution :
IMSE-CNM (CSIC), Inst. de Microelectron. de Sevilla, Sevilla
Abstract :
An Electrostatic Discharge (ESD) protected Low- Noise Amplifier (LNA) for the 2.4 GHz ISM band designed in a 0.13 mum standard RFCMOS technology is presented. The amplifier, including packaging effects, achieves 16.8 dB power gain, reflexion coefficients S11, S22 < -30 dB over the 2.4 GHz ISM band, a peak noise figure of 1.8 dB, and an IIP3 of 1 dBm, while drawing less than 4.5 mA dc biasing current from the 1.2 V power supply. Further, the LNA withstands a Human Body Model (HBM) ESD stress up to plusmn2.0 kV, by means of the additional custom protection circuitry.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit design; low noise amplifiers; radiofrequency integrated circuits; ESD protected low-noise amplifier; ISM band; RFCMOS technology; custom protection circuitry; dc biasing current; electrostatic discharge protected low-noise amplifier; human body model ESD stress; packaging effects; power gain; power supply; reflexion coefficients; Biological system modeling; Electrostatic discharge; Gain; Humans; Low-noise amplifiers; Noise figure; Packaging; Power amplifiers; Power supplies; Protection; Electrostatic discharge (ESD) protection; LNA; Noise figure; RF CMOS;
Conference_Titel :
Circuit Theory and Design, 2007. ECCTD 2007. 18th European Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4244-1341-6
Electronic_ISBN :
978-1-4244-1342-3
DOI :
10.1109/ECCTD.2007.4529539
