Title :
Influence of magnetization processes and device geometry on the GMI effect
Author :
Barandiaran, J.M. ; Garcia Arribas, A. ; Munoz, J.L. ; Kurlyandskaya, G.V.
Author_Institution :
Fac. de Ciencias, Pais Vasco Univ., Bilbao, Spain
Abstract :
Summary form only given. The use of Giant Magneto-Impedance as a mechanism for sensor design has been stressed in the past few years. Nowadays, some devices are already in the market and many different materials with various shapes have been tested for these sensors. In this paper we review the different geometries (wires, ribbons, films) and structures (either homostructures or sandwiches and plated wires) as well as the different materials (either amorphous or crystalline) and magnetization processes occurring in the GMI elements. The different character of the magnetic anisotropy in crystalline and amorphous alloys determines the type of magnetization process dominant in the material (either wall movement or magnetization rotation) as well as the single peak or double peak behaviour of the GMI. The wall movement results typically in larger permeability values and then in improved GMI ratios. However the damping of the walls rapidly reduces the effective permeability that becomes the one corresponding to that of rotation processes.
Keywords :
amorphous magnetic materials; giant magnetoresistance; magnetic anisotropy; magnetic domain walls; magnetic permeability; magnetisation; GMI effect; amorphous; crystalline; device geometry; effective permeability; films; giant magneto-impedance; homostructures; larger permeability values; magnetic anisotropy; magnetization processes; plated wires; ribbons; rotation processes; sandwiches; wall movement; wires; Amorphous magnetic materials; Amorphous materials; Crystalline materials; Crystallization; Geometry; Magnetic anisotropy; Magnetic materials; Magnetic sensors; Magnetization processes; Wires;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001010