• DocumentCode
    1567788
  • Title

    Nonlinear on-chip capacitor characterization

  • Author

    Sutory, Tomas ; Kolka, Zdenek ; Biolek, Dalibor ; Biolkova, Viera

  • Author_Institution
    Dept. of Radio Electron., Brno Univ. of Technol., Brno
  • fYear
    2007
  • Firstpage
    220
  • Lastpage
    223
  • Abstract
    The paper deals with a modification of the CBCM method for nonlinear on-chip capacitance characterization. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the object being measured. A test-chip implementing the method was designed and manufactured in the 0.35 mum CMOS process. It was used for MOSCAP characterization in the full operating voltage range.
  • Keywords
    CMOS integrated circuits; MOS capacitors; integrated circuit manufacture; CBCM method; CMOS process; DC swept sources; MOSCAP characterization; nonlinear Q-v characteristic; nonlinear on-chip capacitor characterization; Capacitance measurement; Capacitors; Current measurement; Design methodology; MOS devices; MOSFETs; Parasitic capacitance; Q measurement; Switches; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuit Theory and Design, 2007. ECCTD 2007. 18th European Conference on
  • Conference_Location
    Seville
  • Print_ISBN
    978-1-4244-1341-6
  • Electronic_ISBN
    978-1-4244-1342-3
  • Type

    conf

  • DOI
    10.1109/ECCTD.2007.4529576
  • Filename
    4529576