DocumentCode
1567788
Title
Nonlinear on-chip capacitor characterization
Author
Sutory, Tomas ; Kolka, Zdenek ; Biolek, Dalibor ; Biolkova, Viera
Author_Institution
Dept. of Radio Electron., Brno Univ. of Technol., Brno
fYear
2007
Firstpage
220
Lastpage
223
Abstract
The paper deals with a modification of the CBCM method for nonlinear on-chip capacitance characterization. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the object being measured. A test-chip implementing the method was designed and manufactured in the 0.35 mum CMOS process. It was used for MOSCAP characterization in the full operating voltage range.
Keywords
CMOS integrated circuits; MOS capacitors; integrated circuit manufacture; CBCM method; CMOS process; DC swept sources; MOSCAP characterization; nonlinear Q-v characteristic; nonlinear on-chip capacitor characterization; Capacitance measurement; Capacitors; Current measurement; Design methodology; MOS devices; MOSFETs; Parasitic capacitance; Q measurement; Switches; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuit Theory and Design, 2007. ECCTD 2007. 18th European Conference on
Conference_Location
Seville
Print_ISBN
978-1-4244-1341-6
Electronic_ISBN
978-1-4244-1342-3
Type
conf
DOI
10.1109/ECCTD.2007.4529576
Filename
4529576
Link To Document