Title :
Gain-Bandwidth Limitations of 0.18μm Si-CMOS RF technology
Author :
Yarman, B. Siddik ; Retdian, Nicodimus ; Takagi, Shigetaga ; Fujii, Nobuo
Author_Institution :
Dept. of Electr. & Electron. Eng., Istanbul Univ., Istanbul
Abstract :
In this paper, gain bandwidth limitations of a regularly processed 0.18 mum Si CMOS FET is investigated over the frequency band of 450 MHz-10 GHz. It is exhibited that 0.18 mum Si CMOS processing technology can safely be utilized to manufacture ultra wideband RF-amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.
Keywords :
CMOS integrated circuits; field effect transistors; radiofrequency amplifiers; Si-CMOS FET; Si-CMOS RF technology; gain-bandwidth limitation; size 0.18 micron; ultrawideband RF-amplifier; wireless communication system; Bandwidth; Broadband amplifiers; CMOS process; CMOS technology; FETs; Radio frequency; Radiofrequency amplifiers; Silicon; Ultra wideband technology; Wireless communication;
Conference_Titel :
Circuit Theory and Design, 2007. ECCTD 2007. 18th European Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4244-1341-6
Electronic_ISBN :
978-1-4244-1342-3
DOI :
10.1109/ECCTD.2007.4529587
