Total-Dose Effects in InP Devices

Author

Hansen, D.L. ; Robinson, M.J. ; Lu, F.

Author_Institution

Boeing Satellite Dev. Center, Los Angeles

Volume

0

fYear

2007

Firstpage

68

Lastpage

72

Abstract

Total dose testing was performed on biased and unbiased InP devices using a ⁶⁰Co source. Photodiodes were tested to a total dose of more than 17 Mrad(Si) and heterojunction bipolar transistors were tested to total doses of more than 3.6 Mrad(Si) and 190 krad(Si) at dose rates of 287 rad(Si)/s and 0.34 rad(Si)/s respectively. For all tests, the devices showed little degradation, indicating that InP technology is sufficiently robust to total dose effects for flight usage.

Keywords

III-V semiconductors; dosimetry; heterojunction bipolar transistors; indium compounds; photodiodes; radiation effects; semiconductor device testing; ⁶⁰Co source; InP; biased semiconductor device; heterojunction bipolar transistors; photodiodes; radiation effects; space-based electronics; total dose testing; unbiased semiconductor device; Circuit testing; Degradation; Heterojunction bipolar transistors; Indium phosphide; Photodiodes; Robustness; Satellites; Space technology; Stimulated emission; Telephony; heterojunction bipolar transistors; indium compounds; radiation effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2007 IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-1464-2

Type

conf

DOI

10.1109/REDW.2007.4342542

Filename

4342542