Proton radiation effects on medium/large area Si PIN photodiodes for Optical Wireless Links for Intra-Satellite Communications (OWLS)

Author

Jiménez, J.J. ; Sánchez-Páramo, J. ; Àlvarez, M.T. ; Domínguez, J.A. ; Oter, J.M. ; Arruego, I. ; Tamayo, R. ; Guerrero, H.

Author_Institution

Inst. Nacional de Tecnica Aeroespacial (INTA), Torrejon de Ardoz

Volume

0

fYear

2007

Firstpage

73

Lastpage

79

Abstract

Components off the shelf (cots) photodiodes suitable for OWLS were irradiated with ~10 to ~60 MeV protons and up to fluences of ~2.5-10¹² p/cm². Electrical and optoelectronic parameters were measured during the test (I-V curves, dark current, responsivity and ideal diode factor). Results on degradation and post-annealing are reported. Preliminary results on the lattice effects are also pointed.

Keywords

annealing; dark conductivity; lattice constants; optical communication equipment; optical links; optical testing; p-i-n photodiodes; proton effects; satellite links; semiconductor device testing; silicon; Si; components off the shelf photodiodes; dark current; electrical parameters; ideal diode factor; intra-satellite communications; lattice effects; optical wireless links; optoelectronic parameters; photodiode degradation; photodiode responsivity; post-annealing; proton radiation effects; silicon PIN photodiodes; Current measurement; Dark current; Degradation; Diodes; Electric variables measurement; Lattices; OWL; PIN photodiodes; Proton radiation effects; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2007 IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-1464-2

Type

conf

DOI

10.1109/REDW.2007.4342543

Filename

4342543