• DocumentCode
    1568053
  • Title

    Pulsed and Steady-State Radiation Effects on Single Junction Si and Multiple Junction GaAs Photocells

  • Author

    Shelton, Jason W. ; Thomes, William J., Jr. ; Stein, David J.

  • Author_Institution
    Sandia Nat. Lab., Albuquerque
  • Volume
    0
  • fYear
    2007
  • Firstpage
    80
  • Lastpage
    84
  • Abstract
    Si single junction photocells manufactured by Sandia National Laboratories and commercially available multiple junction GaAs photocells were tested in a pulsed high-dose mixed gamma-neutron environment. The Si photocells were also tested in steady state gamma environment at two different dose rates.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; gamma-ray effects; neutron effects; photovoltaic cells; semiconductor device testing; semiconductor junctions; silicon; GaAs; Sandia National Laboratories; Si; dose rates; multiple junction gallium arsenide photocells; photovoltaic array; pulsed high-dose mixed gamma-neutron environment; pulsed radiation effects; single junction silicon photocells; steady-state radiation effects; Gallium arsenide; Laboratories; Lighting; Manufacturing; Optical devices; Photovoltaic systems; Radiation effects; Solar power generation; Steady-state; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2007 IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1464-2
  • Type

    conf

  • DOI
    10.1109/REDW.2007.4342544
  • Filename
    4342544
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1568053