Bipolar Phototransistors Reliability Assessment for Space Applications

Author

Gilard, O. ; Quadri, G. ; Spezzigu, P. ; Roux, J.L.

Author_Institution

Centre Nat. d´´Etudes Spatiales (CNES), Toulouse

Volume

0

fYear

2007

Firstpage

85

Lastpage

91

Abstract

Life test, total dose and proton irradiations were performed on silicon-based bipolar phototransistors. A high radiation sensitivity was observed together with abnormal fluctuations of phototransistors collector current during life test. In an attempt to solve this problem, a failure analysis was conducted. Mobile charges located in the photobase passivation layer were found to be at the origin of these fluctuations and are probably also related to the high radiation sensitivity of these devices. Based on the obtained results a new device selection method for space application is proposed.

Keywords

aerospace testing; bipolar transistors; failure analysis; life testing; passivation; phototransistors; proton effects; radiation hardening (electronics); semiconductor device reliability; space vehicle electronics; failure analysis; life testing; photobase passivation layer; phototransistor collector current; proton irradiations; radiation hardened phototransistors; radiation sensitivity; silicon-based bipolar phototransistor reliability; space applications; total dose irradiation; Electric shock; Fluctuations; Life testing; Passivation; Phototransistors; Protons; Radiation hardening; Space technology; Telephony; Temperature measurement; gamma-rays; mobile charge; phototransistors; protons; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2007 IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-1464-2

Type

conf

DOI

10.1109/REDW.2007.4342545

Filename

4342545