DocumentCode
1568072
Title
Voltage-controllable optical-mode transformer integrated with electroabsorption modulator by undercut-wet etching
Author
Wu, Tsu-Hsiu ; Chang, Che-Chun ; Chiu, Yi-Jen
Author_Institution
Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
fYear
2008
Firstpage
57
Lastpage
58
Abstract
In this work, a novel and reliable structure of OMT-integrated EAM is proposed and demonstrated to release the burden in the tapered structure. By applying electrical field on thin quantum well (Q.W.) structure, the efficient phase modulation can be achieved through refractive index change in (QW). Thereby, using ion-implantation to electrically isolate OMT and EAM, the voltage-controllable OMT (VCOMT) can be integrated with high-speed EAM, where not only the parasitic capacitance can be reduced to attain high-speed properties, but also the tunable function in the OMT transform efficiency can be expected.
Keywords
electro-optical modulation; electroabsorption; etching; integrated optoelectronics; ion implantation; optical fabrication; phase modulation; quantum well devices; voltage control; EO-response; OMT transform efficiency; OMT-integrated EAM; VCOMT efficiency; electrical field; electrically isolated EAM; electrically isolated OMT; electroabsorption modulator; high-speed EAM reliable structure; ion-implantation; parasitic capacitance; phase modulation; refractive index; thin quantum well structure; undercut-wet etching; voltage-controllable optical-mode transformer; Etching; High speed optical techniques; Integrated optics; Optical modulation; Optical refraction; Optical variables control; Parasitic capacitance; Phase modulation; Refractive index; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688486
Filename
4688486
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