Title :
Self-aligned top-gate amorphous In-Ga-Zn-O thin film transistors
Author :
Wu, Cheng-Han ; Hsieh, Hsing-Hung ; Wu, Chung-Chih
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
We report self-aligned co-planar top-gate IGZO TFTs with using typical lithography and etching techniques. The fabrication involves no back-side exposure, and thus is more compatible with the typical TFT manufacturing.
Keywords :
amorphous semiconductors; etching; gallium compounds; indium compounds; lithography; thin film transistors; zinc compounds; InGaZnO; amorphous thin film transistors; back-side exposure; coplanar thin film transistors; etching; lithography; oxide-semiconductor-based TFT; self-aligned thin film transistors; top-gate thin film transistors; Amorphous materials; Annealing; CMOS technology; Dielectrics and electrical insulation; Etching; Hydrogen; Lithography; Manufacturing; Temperature; Thin film transistors;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688491
