Title :
A 10.8-mW low-noise amplifier in 0.35-μm SiGe BiCMOS for UWB wireless receivers
Author :
Tsai, Ming-Da ; Lin, Chin-Shen ; Lin, Kun-You ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A UWB low-power and low-noise amplifier is proposed. The UWB LNA achieves better than 14.5-dB gain with 10.8-mW power consumption. The measured minimum noise figure is 3.1 dB and lower than 5.4 dB in the desired band. This MMIC is implemented in a commercial 0.35-μm SiGe BiCMOS technology and occupies total chip size of only 0.74 mm2 including all testing pads.
Keywords :
BiCMOS integrated circuits; MMIC amplifiers; germanium; low noise amplifiers; radio receivers; semiconductor materials; silicon; ultra wideband communication; 0.35 mum; 10.8 mW; MMIC; SiGe; SiGe BiCMOS; UWB wireless receivers; low-noise amplifier; low-power amplifier; BiCMOS integrated circuits; Energy consumption; Germanium silicon alloys; Low-noise amplifiers; MMICs; Noise figure; Noise measurement; Semiconductor device measurement; Silicon germanium; Testing;
Conference_Titel :
Radio and Wireless Symposium, 2006 IEEE
Print_ISBN :
0-7803-9412-7
DOI :
10.1109/RWS.2006.1615089
