Title :
Radiation Hardness Characterization of a 130nm Technology
Author :
Hafer, C. ; Lahey, M. ; Gardner, H. ; Harris, D. ; Jordan, A. ; Farris, T. ; Johnson, M.
Author_Institution :
Aeroflex Colorado Springs, Colorado Springs
Abstract :
Intrinsic and RadHard-by-Design hardness characterization has been performed on a 130 nm fab process. Hardness results from test chips produced in phase II of a NASA Goddard Space Flight Center contract are presented.
Keywords :
integrated circuit testing; nanoelectronics; radiation hardening (electronics); NASA Goddard Space Flight Center; RadHard-by-Design hardness characterization; fabrication process; integrated circuits; intrinsic hardness characterization; radiation hardness characterization; size 130 nm; Circuit testing; Contracts; Fabrication; Flip-flops; Logic testing; NASA; Radiation effects; Single event upset; Space technology; Springs;
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
DOI :
10.1109/REDW.2007.4342552
