DocumentCode :
1568193
Title :
Results of Recent 14 MeV Neutron Single Event Effects Measurements Conducted by the Jet Propulsion Laboratory
Author :
Irom, Farokh ; Miyahira, Tetsuo F. ; Nguyen, Duc N. ; Jun, Insoo ; Normand, Eugene
Author_Institution :
California Inst. of Technol., Pasadena
Volume :
0
fYear :
2007
Firstpage :
141
Lastpage :
145
Abstract :
This paper reports 14 MeV neutron induced single-event effects results for a variety of microelectronic devices that include an ADC, operational amplifiers, optocoupler, flash memory, PowerPC microprocessor, SRAM, and SDRAM. Data were collected to evaluate these devices for possible use in NASA spacecraft.
Keywords :
DRAM chips; SRAM chips; aerospace testing; analogue-digital conversion; flash memories; microprocessor chips; neutron effects; operational amplifiers; space vehicles; ADC; NASA spacecraft; SDRAM; SRAM; electron volt energy 14 MeV; flash memory; jet propulsion laboratory; microelectronic devices; neutron induced single event effect measurement; operational amplifiers; optocoupler; powerPC microprocessor; Flash memory; Laboratories; Microelectronics; Microprocessors; Neutrons; Operational amplifiers; Power amplifiers; Propulsion; Random access memory; SDRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
Type :
conf
DOI :
10.1109/REDW.2007.4342555
Filename :
4342555
Link To Document :
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