DocumentCode
1568263
Title
Dose Rate Upset Investigations on the Xilinx Virtex IV Field Programmable Gate Arrays
Author
Vera, Alonzo ; Llamocca, Daniel ; Pattichis, Marios ; Kemp, William ; Shedd, Walter ; Alexander, David ; Lyke, James
Author_Institution
Univ. of New Mexico, Albuquerque
Volume
0
fYear
2007
Firstpage
172
Lastpage
176
Abstract
The following paper describes the results of ionizing dose rate investigations into upset, supply photocurrent, latch-up, and burnout susceptibility of the Xilinx Virtex IV XC4VFX12. All investigations were performed on a commercial version of the device. The maximum no-upset dose rate was 2.8times108 rad(Si)/s. Photocurrent amplitudes as a function of dose rate were recorded.
Keywords
dosimetry; field programmable gate arrays; photoconductivity; radiation effects; Xilinx Virtex IV field programmable gate arrays; burnout susceptibility; dose rate upset investigations; latch-up; photocurrent; Circuit testing; Field programmable gate arrays; Laboratories; Performance evaluation; Photoconductivity; Printed circuits; Silicon; Single event upset; Telephony; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-1464-2
Type
conf
DOI
10.1109/REDW.2007.4342560
Filename
4342560
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