Title :
Dose Rate Upset Investigations on the Xilinx Virtex IV Field Programmable Gate Arrays
Author :
Vera, Alonzo ; Llamocca, Daniel ; Pattichis, Marios ; Kemp, William ; Shedd, Walter ; Alexander, David ; Lyke, James
Author_Institution :
Univ. of New Mexico, Albuquerque
Abstract :
The following paper describes the results of ionizing dose rate investigations into upset, supply photocurrent, latch-up, and burnout susceptibility of the Xilinx Virtex IV XC4VFX12. All investigations were performed on a commercial version of the device. The maximum no-upset dose rate was 2.8times108 rad(Si)/s. Photocurrent amplitudes as a function of dose rate were recorded.
Keywords :
dosimetry; field programmable gate arrays; photoconductivity; radiation effects; Xilinx Virtex IV field programmable gate arrays; burnout susceptibility; dose rate upset investigations; latch-up; photocurrent; Circuit testing; Field programmable gate arrays; Laboratories; Performance evaluation; Photoconductivity; Printed circuits; Silicon; Single event upset; Telephony; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
DOI :
10.1109/REDW.2007.4342560
