DocumentCode
1568284
Title
Neutron Induced Micro SEL Events in COTS SRAM Devices
Author
Tausch, Jake ; Sleeter, David ; Radaelli, Daniele ; Puchner, Helmut
Author_Institution
JD Instrum., Albuquerque
Volume
0
fYear
2007
Firstpage
185
Lastpage
188
Abstract
This paper provides experimental details of micro-latchup occurrences in SRAM circuitry caused by exposure to neutron irradiation similar to that seen at sea level (terrestrial neutrons). Design enhancements are identified that eliminated the problem.
Keywords
SRAM chips; integrated circuit design; logic design; neutron effects; COTS SRAM devices; micro latchup occurrences; neutron induced micro SEL events; sea level irradiation; Atmosphere; Circuit testing; Error analysis; Ice; Neutrons; Prototypes; Random access memory; Sea level; Telephony; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-1464-2
Type
conf
DOI
10.1109/REDW.2007.4342562
Filename
4342562
Link To Document