DocumentCode :
1568284
Title :
Neutron Induced Micro SEL Events in COTS SRAM Devices
Author :
Tausch, Jake ; Sleeter, David ; Radaelli, Daniele ; Puchner, Helmut
Author_Institution :
JD Instrum., Albuquerque
Volume :
0
fYear :
2007
Firstpage :
185
Lastpage :
188
Abstract :
This paper provides experimental details of micro-latchup occurrences in SRAM circuitry caused by exposure to neutron irradiation similar to that seen at sea level (terrestrial neutrons). Design enhancements are identified that eliminated the problem.
Keywords :
SRAM chips; integrated circuit design; logic design; neutron effects; COTS SRAM devices; micro latchup occurrences; neutron induced micro SEL events; sea level irradiation; Atmosphere; Circuit testing; Error analysis; Ice; Neutrons; Prototypes; Random access memory; Sea level; Telephony; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
Type :
conf
DOI :
10.1109/REDW.2007.4342562
Filename :
4342562
Link To Document :
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