Multi-junction solar cells based on the integration of II/VI and III/V semiconductors

Author

Ding, D. ; Wu, S.-N. ; Wang, S. ; Johnson, S.R. ; Yu, S.-Q. ; Liu, X. ; Furdyna, J.K. ; Zhang, Y.-H.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ

fYear

2008

Firstpage

93

Lastpage

94

Abstract

High-efficiency multifunction solar cells are attracting a great deal of attention for both space and terrestrial applications. We proposed the monolithic integration of the II/VI (ZnCdMg)(SeTe) and the III/V (InAlGa)(AsSb) material systems for multijunction solar cells. These material systems have direct bandgap, zinc blende, quaternary alloys, lattice-matched to GaSb substrates that cover the entire optical spectrum from greater than 3.0 eV to less than 0.4 eV; enabling the fabrication of high quality multijunction solar cells (with an arbitrary number of junctions) that are well matched to the solar spectrum.

Keywords

II-VI semiconductors; III-V semiconductors; aluminium compounds; cadmium compounds; indium compounds; solar cells; zinc compounds; ZnCdMgSeTe-InAlGaAsSb; direct bandgap material; monolithic integration; multijunction solar cells; quaternary alloys; solar energy conversion efficiency; solar spectrum; zinc blende; Energy conversion; Optical materials; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Sun; Tellurium; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the

Conference_Location

Acapulco

Print_ISBN

978-1-4244-1931-9

Electronic_ISBN

978-1-4244-1932-6

Type

conf

DOI

10.1109/LEOS.2008.4688504

Filename

4688504