DocumentCode :
1568315
Title :
Progress in CIGS solar cell technologies
Author :
Niki, Shigeru ; Ishizuka, Syogo ; Sakurai, Kei-ichiro ; Matsubara, Koji ; Tampo, Hitoshi ; Komaki, Hironori ; Kamikawa-Shimizu, Yukiko ; Maejima, Keigo ; Yoshiyama, Takashi ; Mizukoshi, Kazuyuki ; Yamada, Akimasa ; Nakanishi, Hisayuki ; Terada, Norio
Author_Institution :
Res. Center for Photovoltaics, AIST, Tsukuba
fYear :
2008
Firstpage :
95
Lastpage :
96
Abstract :
Cu(In1-xGax)Se2 (CIGS)-based solar cells have emerged as one of the most promising candidates for high-efficiency low-cost thin-film solar cells, and a significant improvement in solar cell performance has been reported with conversion efficiencies as high as eta=19.9%, though the efficiencies of commercial modules are limited to eta=11-12%. In Japan, the efficiency goal for 2030 is set to be eta=25% for small area cells and eta=22% for large-size modules, therefore improvement in conversion efficiencies for both cells and modules are required.
Keywords :
copper compounds; gallium compounds; indium compounds; solar cells; ternary semiconductors; thin film devices; CIGS solar cell technologies; Cu(In1-xGax)Se2; commercial module efficiency; high-efficiency low-cost thin-film solar cell performance; solar cell conversion efficiency; Crystalline materials; Crystallization; Material properties; Monitoring; Optimized production technology; Photoelectricity; Photonic band gap; Photovoltaic cells; Spectroscopy; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
Type :
conf
DOI :
10.1109/LEOS.2008.4688505
Filename :
4688505
Link To Document :
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