DocumentCode
1568317
Title
Total Ionizing Dose (TID) Tests on Non-Volatile Memories: Flash and MRAM
Author
Nguyen, D.N. ; Irom, F.
Author_Institution
California Inst. of Technol., Pasadena
Volume
0
fYear
2007
Firstpage
194
Lastpage
198
Abstract
We report on TID tests of magnetoresistive random access memory (MRAM), and advanced 4 Gbit flash memories from three manufacturers. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures.
Keywords
flash memories; integrated circuit testing; magnetoresistive devices; radiation hardening (electronics); random-access storage; space vehicle electronics; MRAM memories; biased interval irradiations; flash memories; in-situ irradiations; magnetoresistive random access memory; nonvolatile memories; radiation hardening; total accumulated dose failures; total ionizing dose tests; CMOS technology; Electrodes; Magnetic separation; Magnetic tunneling; Magnetoresistance; Nonvolatile memory; Polarization; Random access memory; Switches; Testing; Flash; In-situ; MRAM; TID;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-1464-2
Type
conf
DOI
10.1109/REDW.2007.4342564
Filename
4342564
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