• DocumentCode
    1568335
  • Title

    Proton and Heavy Ion Induced Semi-Permanent Upsets in Double Data Rate SDRAMs

  • Author

    Koga, R. ; Yu, P. ; Crain, S. ; George, J.

  • Author_Institution
    Aerosp. Corp., El Segundo
  • Volume
    0
  • fYear
    2007
  • Firstpage
    199
  • Lastpage
    203
  • Abstract
    Semi-permanent upset sensitivity in DDR SDRAMs is investigated. A technique to reduce sensitivity is examined. The reduction extends to high LET regions for some heavy ion induced upsets.
  • Keywords
    DRAM chips; proton effects; sensitivity; LET regions; double data rate SDRAM; heavy ion induced semipermanent upsets; proton effects; sensitivity; Application software; CMOS technology; DRAM chips; Logic arrays; Logic devices; Manufacturing; Protons; Single event transient; Single event upset; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2007 IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1464-2
  • Type

    conf

  • DOI
    10.1109/REDW.2007.4342565
  • Filename
    4342565
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1568335