Title :
Proton and Heavy Ion Induced Semi-Permanent Upsets in Double Data Rate SDRAMs
Author :
Koga, R. ; Yu, P. ; Crain, S. ; George, J.
Author_Institution :
Aerosp. Corp., El Segundo
Abstract :
Semi-permanent upset sensitivity in DDR SDRAMs is investigated. A technique to reduce sensitivity is examined. The reduction extends to high LET regions for some heavy ion induced upsets.
Keywords :
DRAM chips; proton effects; sensitivity; LET regions; double data rate SDRAM; heavy ion induced semipermanent upsets; proton effects; sensitivity; Application software; CMOS technology; DRAM chips; Logic arrays; Logic devices; Manufacturing; Protons; Single event transient; Single event upset; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
DOI :
10.1109/REDW.2007.4342565
