Title :
Dynamic Single Event Upset Characterization of the MT48LC4M32B2TG-6 SDRAM Using Proton Irradiation
Author :
Hiemstra, David M. ; Pranajaya, Freddy
Author_Institution :
MDA Space Missions, Brampton
Abstract :
Dynamic single event upset characterization of the MT48LC4M32B2TG-6 SDRAM using proton irradiation is presented. The device´s upset rate in the space radiation environment is estimated.
Keywords :
DRAM chips; aerospace testing; integrated circuit testing; proton effects; MT48LC4M32B2TG-6 SDRAM; device upset rate; dynamic single event upset characterization; proton irradiation; space radiation environment; Clocks; Manufacturing; Particle beams; Protons; Prototypes; SDRAM; Single event upset; Software prototyping; Test facilities; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
DOI :
10.1109/REDW.2007.4342567