Title :
Total Ionizing Dose Testing of SiGe 7HP discrete Heterojunction Bipolar Transistors for ELDRS Effects
Author :
Hansen, D.L. ; Pong, S. ; Rosenthal, P. ; Gorelick, J.
Author_Institution :
Boeing Satellite Dev. Center, Los Angeles
Abstract :
Thirty discrete heterojunction bipolar transistors fabricated in IBM´s SiGe 7HP process were irradiated at dose rates of 0.013 rad(Si)/s, 0.11 rad(Si)/s and 171 rad(Si)/s to determine their sensitivity to total-dose irradiation and dose-rate effects. All devices tested showed less than 4% change in beta 0.6% change in turn on voltage. In addition, there was no measurable enhancement of degradation due to low dose-rate irradiation.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device manufacture; semiconductor device testing; 7HP discrete heterojunction bipolar transistors; ELDRS effects; IBM; SiGe; dose-rate effects; total ionizing dose testing; total-dose irradiation; CMOS technology; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Production; Satellites; Silicon germanium; Telephony; Temperature; Testing; ELDRS; SiGe; SiGe HBT; gamma radiation;
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
DOI :
10.1109/REDW.2007.4342569
