• DocumentCode
    1568470
  • Title

    Ge photodetector integrated with Ge-on-insulator MOSFET by using oxidation condensation technique

  • Author

    Takenaka, M. ; Tanabe, S. ; Dissanayake, S. ; Sugahara, S. ; Takagi, S.

  • Author_Institution
    Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo
  • fYear
    2008
  • Firstpage
    117
  • Lastpage
    118
  • Abstract
    Ge photodetectors and Ge MOSFETs were integrated on Ge-on-Insulator substrate by using oxidation condensation technique. The responsivity of photodetectors up to 1575 nm and excellent switching of MOSFETs were demonstrated.
  • Keywords
    MOSFET; condensation; elemental semiconductors; germanium; oxidation; photodetectors; semiconductor-insulator boundaries; Ge; Ge photodetector; Ge-on-insulator MOSFET; oxidation condensation technique; switching; Atomic layer deposition; Fabrication; Germanium silicon alloys; Large scale integration; MOSFET circuits; Monolithic integrated circuits; Oxidation; Photodetectors; Silicon germanium; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688516
  • Filename
    4688516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1568470