DocumentCode
1568481
Title
Fabrication of Ge nanocrystals doped silica-on-silicon waveguides and observation of their strong quantum confinement effect
Author
Ou, Haiyan ; Rottwitt, Karsten
Author_Institution
Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby
fYear
2008
Firstpage
119
Lastpage
120
Abstract
Standard silica-on-silicon waveguides with a core doped by Ge nanocrystals were fabricated using PECVD and RIE. Transmission of the waveguide was measured, and strong absorption peaks at 1056.8 nm, 1406 nm and 1263.2 nm were observed.
Keywords
elemental semiconductors; germanium; nanostructured materials; optical waveguides; plasma CVD; sputter etching; PECVD; RIE; absorption peaks; nanocrystals; silica-on-silicon waveguides; strong quantum confinement; waveguide transmission; Fiber nonlinear optics; Nanocrystals; Nonlinear optics; Optical device fabrication; Optical devices; Optical films; Optical waveguide theory; Optical waveguides; Potential well; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688517
Filename
4688517
Link To Document