DocumentCode :
1568513
Title :
Broad area metal/metal bonding of thin film edge emitting lasers to silicon
Author :
Palit, Sabarni ; Tsvid, Gene ; Kirch, Jeremy ; Huang, Juno Yu-Ting ; Mawst, Luke ; Kuech, Thomas ; Jokerst, Nan
Author_Institution :
ECE Dept, Duke Univ., Durham, NC
fYear :
2008
Firstpage :
123
Lastpage :
124
Abstract :
Thin film edge emitting lasers with top/bottom stripes are broad area metal/metal bonded to a Si substrate. The bonding and top/bottom stripes are steps forward toward better heat dissipation, current confinement, and mechanical bonding strength.
Keywords :
III-V semiconductors; bonding processes; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; semiconductor lasers; silicon; surface emitting lasers; III-V thin film EEL; In0.2Ga0.8As-GaAs0.7P0.3; Si; broad area metal/metal bonding; current confinement; heat dissipation; mechanical bonding strength; silicon substrate; thin film edge emitting lasers; top/bottom stripes; Bonding; Capacitive sensors; III-V semiconductor materials; Metallization; Optical materials; Semiconductor thin films; Silicon; Substrates; Thermal conductivity; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
Type :
conf
DOI :
10.1109/LEOS.2008.4688519
Filename :
4688519
Link To Document :
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