• DocumentCode
    1568513
  • Title

    Broad area metal/metal bonding of thin film edge emitting lasers to silicon

  • Author

    Palit, Sabarni ; Tsvid, Gene ; Kirch, Jeremy ; Huang, Juno Yu-Ting ; Mawst, Luke ; Kuech, Thomas ; Jokerst, Nan

  • Author_Institution
    ECE Dept, Duke Univ., Durham, NC
  • fYear
    2008
  • Firstpage
    123
  • Lastpage
    124
  • Abstract
    Thin film edge emitting lasers with top/bottom stripes are broad area metal/metal bonded to a Si substrate. The bonding and top/bottom stripes are steps forward toward better heat dissipation, current confinement, and mechanical bonding strength.
  • Keywords
    III-V semiconductors; bonding processes; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; semiconductor lasers; silicon; surface emitting lasers; III-V thin film EEL; In0.2Ga0.8As-GaAs0.7P0.3; Si; broad area metal/metal bonding; current confinement; heat dissipation; mechanical bonding strength; silicon substrate; thin film edge emitting lasers; top/bottom stripes; Bonding; Capacitive sensors; III-V semiconductor materials; Metallization; Optical materials; Semiconductor thin films; Silicon; Substrates; Thermal conductivity; Thin film devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688519
  • Filename
    4688519
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1568513