Title :
Distortion behavior in wireless and RF MOS-based switches
Author :
Caverly, Robert H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
Abstract :
RF MOS devices are finding increased use in a variety of wireless systems that require a high degree of functionality, low dc power consumption and easy integration with digital technology. This paper shows the effects of device size and technology (bulk versus SOI) on MOSFET nonlinearities in RF control applications such as series and shunt-connected devices in switch and attenuator applications. A theory is advanced that is verified with distortion measurements on fabricated control devices.
Keywords :
MOSFET; field effect transistor switches; microwave switches; MOSFET nonlinearities; RF MOS-based switches; RF control applications; attenuator applications; series devices; shunt-connected devices; wireless systems; Attenuators; MOS devices; MOSFET circuits; Parasitic capacitance; Radio frequency; Silicon on insulator technology; Size control; Switches; Switching circuits; Voltage control;
Conference_Titel :
Radio and Wireless Symposium, 2006 IEEE
Print_ISBN :
0-7803-9412-7
DOI :
10.1109/RWS.2006.1615123
