DocumentCode
1568602
Title
Distortion behavior in wireless and RF MOS-based switches
Author
Caverly, Robert H.
Author_Institution
Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
fYear
2006
Firstpage
175
Lastpage
178
Abstract
RF MOS devices are finding increased use in a variety of wireless systems that require a high degree of functionality, low dc power consumption and easy integration with digital technology. This paper shows the effects of device size and technology (bulk versus SOI) on MOSFET nonlinearities in RF control applications such as series and shunt-connected devices in switch and attenuator applications. A theory is advanced that is verified with distortion measurements on fabricated control devices.
Keywords
MOSFET; field effect transistor switches; microwave switches; MOSFET nonlinearities; RF MOS-based switches; RF control applications; attenuator applications; series devices; shunt-connected devices; wireless systems; Attenuators; MOS devices; MOSFET circuits; Parasitic capacitance; Radio frequency; Silicon on insulator technology; Size control; Switches; Switching circuits; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Symposium, 2006 IEEE
Print_ISBN
0-7803-9412-7
Type
conf
DOI
10.1109/RWS.2006.1615123
Filename
1615123
Link To Document