DocumentCode
1568603
Title
Plasmonic device in Si CMOS
Author
Tang, Liang ; Latif, Salman ; Miller, David A B
Author_Institution
Ginzton Lab., Stanford Univ., Stanford, CA
fYear
2008
Firstpage
139
Lastpage
140
Abstract
Using Al metal, here for the first time, we demonstrate plasmonic devices fabricated on a commercial complementary metal-oxide-semiconductor (CMOS) chip, paving the way for plasmonics to become the next wave of chip-scale optoelectronic technology.
Keywords
CMOS integrated circuits; aluminium; integrated optoelectronics; plasmonics; silicon; system-on-chip; Al; CMOS; Si; chip scale optoelectronic technology; plasmonic device; Apertures; CMOS technology; Detectors; Fingers; Nanostructures; Optical devices; Photoconductivity; Photodetectors; Plasmons; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688527
Filename
4688527
Link To Document