Interface magnetism in epitaxial Fe/InAs heterostructures

Author

Xu, Yong Bing ; Wu, Junyong ; Wang, Shuhui ; Tselepi, M. ; Bland, J.A.C. ; van der Laan, G.

Author_Institution

Dept. of Electron., York Univ., UK

fYear

2002

Abstract

Summary form only given. Ferromagnetic metal/semiconductor heterostructures are of growing interest for the development of novel spin-electronic devices. While Fe/GaAs has received much attention, Fe/InAs offers excellent opportunities for controlling electrical as well as magnetic properties making this system suitable for the application. Our previous studies of Fe/InAs have shown that bcc Fe can be stabilized on InAs, which has a narrow gap of about 0.36 eV at 300 K, and forms low resistance contacts. In this paper, we report on a study of the interface magnetism, and in particular the magnetization at the Fe-InAs interface, using MOKE, AGFM and XMCD. The interface magnetic properties are key issues for current research, as any spin-sensitive devices require well-defined magnetic interface layers.

Keywords

III-V semiconductors; indium compounds; interface magnetism; iron; magnetic epitaxial layers; magnetisation; AGFM; Fe-InAs; MOKE; XMCD; epitaxial Fe/InAs heterostructure; ferromagnetic metal/semiconductor heterostructure; interface magnetism; magnetization; spin electronic device; Anisotropic magnetoresistance; Extraterrestrial measurements; Gallium arsenide; Iron; Laboratories; Magnetic anisotropy; Magnetic films; Magnetic properties; Magnetization; Perpendicular magnetic anisotropy;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Conference_Location

Amsterdam, The Netherlands

Print_ISBN

0-7803-7365-0

Type

conf

DOI

10.1109/INTMAG.2002.1001069

Filename

1001069